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2SK2907-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,0078 100A 125W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 100 400 30 1268.3 125 150 -55 ~ +150
L=0.169mH,Vcc=24V
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=50A ID=50A VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=100A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C
Min. 60 2,5
Typ. 3,0 10 0,2 10 5,7 55 5400 2100 550 29 200 160 150 1,0 85 0,21
Max. 3,5 500 1,0 100 7,8 8100 3150 830 50 350 240 230 1,5
fs iss oss rss d(on) r d(off) f AV SD rr rr
25
100
Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
R R
th(ch-c) th(ch-a)
Symbol channel to case channel to ambient
Min.
Typ.
Max. 1,0 30,00
Unit C/W C/W
N-channel MOS-FET
60V 0,0078 100A 125W
2SK2907-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=50A; VGS=10V
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
1
RDS(ON) [m ]
2
ID [A]
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=10mA; VDS=VGS
RDS(ON) [m ]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=100A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
Eas=f(starting Tch): VCC=24V; IAV 100A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Transient Thermal impedance
EAV [mJ]
10
ID [A]
12
Zth(ch-c) [K/W]
Zthch=f(t) parameter:D=t/T
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,0078 100A 125W
2SK2907-01
FAP-IIIB Series
Typical Switching Characteristics
t=f(ID): VCC = 30V, VGS = 10V, RG = 10
> Characteristics
t [ns]
VSD [V]
Power Dissipation PD=f(TC)
125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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